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| 2SK2618LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications * Low ON-state resistance. * Low Qg Absolute Maximum Ratings / Ta=25C Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable power Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Diode Forward Voltage Switching Time Test Circuit VDD=200V PW=1S D.C.0.5% VGS=15V D ID=3A RL=66.7 16.1 VDSS VGSS ID IDP (Tc=25C) PD Tch Tstg 500 30 5 20 30 150 --55 to +150 min unit V V A A W C C typ max 1.0 100 5.5 3.0 0.95 700 250 120 20 20 20 50 25 1.2 1.25 unit V mA nA V S pF pF pF nC ns ns ns ns V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD ID=1mA VDS=500V VGS=30V VDS=10V VDS=10V ID=3A VDS=20V VDS=20V VDS=20V VDS=200V GS=10V , VGS=0 , VGS=0 , VDS=0 , ID=1mA , ID=3A , VGS=15V , , , , f=1MHz f=1MHz f=1MHz ID=5A 500 3.5 1.5 See Specified Test Circuit IS =5A , VGS = 0 Case Outline TO-220FI(LS) (unit:mm) 10.0 3.5 3.2 4.5 2.8 7.2 16.0 VOUT G 2SK2618LS 0.9 1.2 14.0 3.6 P.G RGS 50 S 1 23 0.75 Specifications and information herein are subject to change without notice. 2.55 2.55 SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 960329TM2fXHD 2.4 0.6 0.7 |
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